TRS15H120H,S1Q
ActiveToshiba Semiconductor and Storage
DIODE SIL CARB 1200V 50A TO2472L
TRS15H120H,S1Q
ActiveToshiba Semiconductor and Storage
DIODE SIL CARB 1200V 50A TO2472L
Description
General part information
TRS15H120H,S1Q
DIODE SIL CARB 1200V 50A TO2472L
Technical Specifications
Parameters and characteristics for this part
| Specification | TRS15H120H,S1Q |
|---|---|
| Capacitance | 1673 pF |
| Current - Average Rectified (Io) | 50 A |
| Current - Reverse Leakage | 100 µA |
| Mounting Type | Through Hole |
| Operating Temperature - Junction | 175 °C |
| Package / Case | TO-247-2 |
| Package Name | TO-247-2L |
| Reverse Recovery Time (trr) | 0 ns |
| Speed | No Recovery Time |
| Speed - Fast Recovery (Minimum) | 500 mA |
| Speed - Recovery Current | 500 mA, 500 mA |
| Technology | SiC (Silicon Carbide) Schottky |
| Voltage - DC Reverse (Vr) (Max) | 1200 V |
| Voltage - Forward (Vf) (Max) | 1.45 V, 1.45 V |
Pricing
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