FGH40N65UFDTU
ObsoleteON Semiconductor
IGBT, 650V, 40A, 1.8V, TO-247<BR>LOW VCE(ON) FIELD STOP
FGH40N65UFDTU
ObsoleteON Semiconductor
IGBT, 650V, 40A, 1.8V, TO-247<BR>LOW VCE(ON) FIELD STOP
Description
General part information
FGH40N65UFD Series
Using novel field stop IGBT technology, ON Semiconductor’s field stop IGBTs offer the optimum performance for solar inverter, UPS, welder and PFC applications where low conduction and switching losses are essential.
Technical Specifications
Parameters and characteristics for this part
| Specification | FGH40N65UFDTU |
|---|---|
| Current - Collector (Ic) (Max) | 80 A |
| Current - Collector Pulsed (Icm) | 120 A |
| Gate Charge | 120 nC |
| IGBT Type | Field Stop |
| Input Type | Standard |
| Mounting Type | Through Hole |
| Operating Temperature (Max) | 150 °C |
| Operating Temperature (Min) | -55 °C |
| Package / Case | TO-247-3 |
| Package Name | TO-247-3 |
| Power - Max | 290 W |
| Reverse Recovery Time (trr) | 45 ns |
| Switching Energy (Off) | 460 µJ |
| Switching Energy (On) | 1.19 mJ |
| Td (off) @ 25°C | 112 ns |
| Td (on) @ 25°C | 24 ns, 24 ns |
| Test Condition Current | 40 A |
| Test Condition Resistance | 10 Ohm |
| Test Condition Voltage | 400 V |
| Test Condition Voltage (Secondary) | 15 V |
| Vce(on) (Max) | 2.4 V |
| Voltage - Collector Emitter Breakdown (Max) | 650 V |
Pricing
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CAD
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Documents
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