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BSS138-13-F - SOT-23-3

BSS138-13-F

Active
Diodes Inc

N-CHANNEL ENHANCEMENT MODE MOSFET

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BSS138-13-F - SOT-23-3

BSS138-13-F

Active
Diodes Inc

N-CHANNEL ENHANCEMENT MODE MOSFET

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationBSS138-13-F
Current - Continuous Drain (Id) @ 25°C200 mA
Drain to Source Voltage (Vdss)50 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Input Capacitance (Ciss) (Max) @ Vds50 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseSOT-23-3, TO-236-3, SC-59
Power Dissipation (Max) [Max]300 mW
Rds On (Max) @ Id, Vgs3.5 Ohm
Supplier Device PackageSOT-23-3
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id1.5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyTape & Reel (TR) 10000$ 0.04
20000$ 0.03
30000$ 0.03
50000$ 0.03
70000$ 0.03
100000$ 0.03
250000$ 0.02

Description

General part information

BSS138DWQ Series

This MOSFET is designed to minimize the on-state resistance (RDS(ON)), yet maintain superior switching performance, making it ideal for high efficiency power management applications.