Description
General part information
IPT039N15N5ATMA1
Infineon’sOptiMOS™ power MOSFETinTO-Leadless packageis optimized for high current applications, such as forklifts,light electric vehicles (LEV),power tools, point-of-loads (POL),telecomand e-fuses. Furthermore, the 60 percent smaller package size enables a very compact design. Compared to D²PAK 7-pin, TO-Leadless shows a substantial reduction in footprint of 30 percent. The 50 percent reduced height offers a significant advantage in narrow applications such as rack or blade servers.
Technical Specifications
Parameters and characteristics for this part
| Specification | IPT039N15N5ATMA1 |
|---|---|
| Current - Continuous Drain (Id) (Ta) | 21 A |
| Current - Continuous Drain (Id) (Tc) | 190 A |
| Drain to Source Voltage (Vdss) | 150 V |
| Drive Voltage (Max Rds On) | 8 V |
| Drive Voltage (Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Max) | 98 nC |
| Input Capacitance (Ciss) (Max) | 7700 pF |
| Mounting Type | Surface Mount |
| Operating Temperature (Max) | 175 °C |
| Operating Temperature (Min) | -55 °C |
| Package / Case | 8-PowerSFN |
| Package Name | PG-HSOF-8 |
| Power Dissipation (Max) | 3.8 W, 319 W |
| Rds On (Max) | 3.9 mOhm |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) | 4.6 V |
Pricing
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