Description
General part information
IPG20N04S4L18AATMA1
OptiMOS™-T2 Power-Transistor
Technical Specifications
Parameters and characteristics for this part
| Specification | IPG20N04S4L18AATMA1 |
|---|---|
| Channel Count | 2 |
| Configuration | N-Channel |
| Configuration - Features | Dual |
| Current - Continuous Drain (Id) (Tc) | 20 A |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Max) | 15 nC |
| Grade | Automotive |
| Input Capacitance (Ciss) (Max) | 1071 pF |
| Mounting Type | Wettable Flank, Surface Mount |
| Operating Temperature (Max) | 175 °C |
| Operating Temperature (Min) | -55 °C |
| Package / Case | 8-PowerVDFN |
| Package Name | PG-TDSON-8-10 |
| Power - Max (Tc) | 26 W |
| Qualification | AEC-Q101 |
| Rds On (Max) | 18 mOhm |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) | 2.2 V |
Pricing
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CAD
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