Description
General part information
CY62167EV30LL-45BVXI
CY62167EV30LL-45BVXI is a high-performance CMOS static RAM available in configurations of 1M words by 16 bits or 2M words by 8 bits. Its advanced circuit design delivers ultra-low active current, making it perfect for More Battery LifeTM(MoBL®) in portable applications like cellular telephones. With an automatic power down feature reducing power consumption by 99% during idle addresses, and standby mode activation when deselected, this device ensures energy-efficient operation. Additionally, the input and output pins enter a high-impedance state under various conditions, including deselection, disabled outputs, and ongoing write operations. Experience superior power efficiency and performance with the CY62167EV30LL-45BVXI CMOS static RAM.
Technical Specifications
Parameters and characteristics for this part
| Specification | CY62167EV30LL-45BVXI |
|---|---|
| Access Time | 45 ns |
| Memory Depth (Option 1) | 2 M |
| Memory Depth (Option 2) | 1 M |
| Memory Format | SRAM |
| Memory Interface (Type) | Parallel |
| Memory Organization | 1M x 16, 2M x 8 |
| Memory Size | 16 Mb |
| Memory Type | Volatile |
| Memory Width (Option 1) | 8 bit |
| Memory Width (Option 2) | 16 bit |
| Mounting Type | Surface Mount |
| Operating Temperature (Max) | 85 °C |
| Operating Temperature (Min) | -40 °C |
| Package / Case | 48-VFBGA |
| Package Length | 6 mm |
| Package Name | 48-VFBGA |
| Package Width | 8 mm |
| Technology | SRAM - Asynchronous |
| Voltage - Supply (Maximum) | 3.6 V |
| Voltage - Supply (Minimum) | 2.2 V |
| Write Cycle Time - Page | 45 ns |
| Write Cycle Time - Word | 45 ns |
Pricing
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