WPB4001-1E
ObsoleteON Semiconductor
MOSFET N-CH 500V 26A TO3P-3L
WPB4001-1E
ObsoleteON Semiconductor
MOSFET N-CH 500V 26A TO3P-3L
Description
General part information
WPB4001-1E
MOSFET N-CH 500V 26A TO3P-3L
Technical Specifications
Parameters and characteristics for this part
| Specification | WPB4001-1E |
|---|---|
| Current - Continuous Drain (Id) (Ta) | 26 A |
| Current - Continuous Drain (Id) (Ta) (2) | 2 A |
| Drain to Source Voltage (Vdss) | 500 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Max) | 87 nC |
| Input Capacitance (Ciss) (Max) | 2250 pF |
| Mounting Type | Through Hole |
| Operating Temperature | 150 °C |
| Package / Case | TO-3P-3, SC-65-3 |
| Package Name | TO-3P-3L |
| Power Dissipation (Max) | 220 W, 2.5 W |
| Rds On (Max) | 260 mOhm |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 30 V |
Pricing
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