SQS201CENW-T1_GE3
ActiveVishay Dale
P-CHANNEL 100-V (D-S) 175C MOSFE
SQS201CENW-T1_GE3
ActiveVishay Dale
P-CHANNEL 100-V (D-S) 175C MOSFE
Description
General part information
SQS201CENW-T1_GE3
P-CHANNEL 100-V (D-S) 175C MOSFE
Technical Specifications
Parameters and characteristics for this part
| Specification | SQS201CENW-T1_GE3 |
|---|---|
| Current - Continuous Drain (Id) (Tc) | 16 A |
| Drain to Source Voltage (Vdss) | 100 V |
| Drive Voltage (Max Rds On) | 4.5 V |
| Drive Voltage (Min Rds On) | 10 V |
| FET Type | P-Channel |
| Gate Charge (Max) | 26 nC |
| Grade | Automotive |
| Input Capacitance (Ciss) (Max) | 1330 pF |
| Mounting Type | Surface Mount |
| Operating Temperature (Max) | 175 °C |
| Operating Temperature (Min) | -55 °C |
| Package / Case | PowerPAK® 1212-8W |
| Package Name | PowerPAK® 1212-8W |
| Power Dissipation (Max) | 62.5 W |
| Qualification | AEC-Q101 |
| Rds On (Max) | 80 mOhm |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) | 2.5 V |
Pricing
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