Description
General part information
IPT022N10NF2SATMA1
Infineon'sStrongIRFET™ 2power MOSFET 100 V features low RDS(on)of 2.2 mOhm, addressing a broad range of applications from low- to high-switching frequency.
Technical Specifications
Parameters and characteristics for this part
| Specification | IPT022N10NF2SATMA1 |
|---|---|
| Current - Continuous Drain (Id) (Ta) | 29 A |
| Drain to Source Voltage (Vdss) | 100 V |
| Drive Voltage (Max Rds On) | 6 V |
| Drive Voltage (Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Max) | 155 nC |
| Input Capacitance (Ciss) (Max) | 7300 pF |
| Mounting Type | Surface Mount |
| Operating Temperature (Max) | 175 °C |
| Operating Temperature (Min) | -55 °C |
| Package / Case | 8-PowerSFN |
| Package Name | PG-HSOF-8-10 |
| Power Dissipation (Max) | 3.8 W, 250 W |
| Rds On (Max) | 2.25 mOhm |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) | 3.8 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Sign in to see pricing
Create a free account to access distributor pricing data.
CAD
3D models and CAD resources for this part
Documents
Technical documentation and resources