Specification	SIJH112E-T1-GE3

Current - Continuous Drain (Id) (Ta)	23 A
Current - Continuous Drain (Id) (Tc)	225 A
Drain to Source Voltage (Vdss)	100 V
FET Type	N-Channel
Gate Charge (Max)	160 nC
Input Capacitance (Ciss) (Max)	8050 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	175 °C
Operating Temperature (Min)	-55 °C
Package / Case	8-PowerTDFN
Package Length	8 mm
Package Name	PowerPAK®
Package Width	8 mm
Power Dissipation (Max)	333 W, 3.3 W
Rds On (Max)	2.8 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max)	4 V

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