Description
General part information
IPI320N20N3GAKSA1
MOSFET N-CH 200V 34A TO262-3
Technical Specifications
Parameters and characteristics for this part
| Specification | IPI320N20N3GAKSA1 |
|---|---|
| Current - Continuous Drain (Id) (Tc) | 34 A |
| Drain to Source Voltage (Vdss) | 200 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Max) | 29 nC |
| Mounting Type | Through Hole |
| Operating Temperature (Max) | 175 °C |
| Operating Temperature (Min) | -55 °C |
| Package / Case | TO-262AA, I2PAK, TO-262-3 Long Leads |
| Package Name | PG-TO262-3 |
| Power Dissipation (Max) | 136 W |
| Rds On (Max) | 32 mOhm |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) | 4 V |
Pricing
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