DMN1029UFDB-7

Active

Diodes Inc

SMALL SIGNAL FIELD-EFFECT TRANSISTOR,

Search across all available documentation for this part.

Active

Diodes Inc

SMALL SIGNAL FIELD-EFFECT TRANSISTOR,

Technical Specifications

Parameters and characteristics for this part

Specification	DMN1029UFDB-7

Configuration	2 N-Channel (Dual)
Current - Continuous Drain (Id) @ 25°C	5.6 A
Drain to Source Voltage (Vdss)	12 V
Gate Charge (Qg) (Max) @ Vgs	19.6 nC
Input Capacitance (Ciss) (Max) @ Vds	914 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	6-UDFN Exposed Pad
Power - Max [Max]	1.4 W
Rds On (Max) @ Id, Vgs	29 mOhm
Supplier Device Package	U-DFN2020-6 (Type B)
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	1 V

N-Channel MOSFET

Part	Mounting Type	Supplier Device Package	Operating Temperature [Min]	Operating Temperature [Max]	Configuration	Power - Max [Max]	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs	Package / Case	Current - Continuous Drain (Id) @ 25°C	Technology	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id
Diodes Inc DMN1029UFDB-7	Surface Mount	U-DFN2020-6 (Type B)	-55 °C	150 °C	2 N-Channel (Dual)	1.4 W	914 pF	19.6 nC	6-UDFN Exposed Pad	5.6 A	MOSFET (Metal Oxide)	12 V	29 mOhm	1 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel MOSFET

Technical documentation and resources