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Description

General part information

R6012FNJTL

MOSFET N-CH 600V 12A LPT

Technical Specifications

Parameters and characteristics for this part

SpecificationR6012FNJTL
Current - Continuous Drain (Id) (Tc)12 A
Drain to Source Voltage (Vdss)600 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Max)35 nC
Input Capacitance (Ciss) (Max)1300 pF
Mounting TypeSurface Mount
Operating Temperature150 °C
Package / CaseD2PAK (2 Leads + Tab), TO-263-3, TO-263AB
Package NameLPTS
Power Dissipation (Max)50 W
Rds On (Max)510 mOhm
TechnologyMOSFET (Metal Oxide)
Vgs (Max)30 V
Vgs(th) (Max)5 V

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