Description
General part information
IPB039N10N3GATMA1
The IPB039N10N3 G is an OptiMOS™ N-channel Power MOSFET offers superior solutions for high efficiency, high power-density SMPS. Compared to the next best technology this family achieves a reduction of 30% in both RDS (ON) and FOM.
Technical Specifications
Parameters and characteristics for this part
| Specification | IPB039N10N3GATMA1 |
|---|---|
| Current - Continuous Drain (Id) (Tc) | 160 A |
| Drain to Source Voltage (Vdss) | 100 V |
| Drive Voltage (Max Rds On) | 6 V |
| Drive Voltage (Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Max) | 117 nC |
| Input Capacitance (Ciss) (Max) | 8410 pF |
| Mounting Type | Surface Mount |
| Operating Temperature (Max) | 175 °C |
| Operating Temperature (Min) | -55 °C |
| Package Leads | 6 Leads |
| Package Name | TO-263-7, D2PAK, PG-TO263-7 |
| Power Dissipation (Max) | 214 W |
| Rds On (Max) | 3.9 mOhm |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) | 3.5 V |
Pricing
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CAD
3D models and CAD resources for this part