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ISC044N15NM6ATMA1

ISC044N15NM6ATMA1

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INFINEON

ISC044N15NM6 IS OPTIMOS™ 6 POWER MOSFET 150 V NORMAL LEVEL IN SUPERSO8 PACKAGE

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ISC044N15NM6ATMA1

ISC044N15NM6ATMA1

Active
INFINEON

ISC044N15NM6 IS OPTIMOS™ 6 POWER MOSFET 150 V NORMAL LEVEL IN SUPERSO8 PACKAGE

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Description

General part information

ISC044N15NM6ATMA1

ISC044N15NM6 OptiMOS™ 6 150 V in normal level is setting a new level of performance within the highly competitive 150 V market. OptiMOS™ 6 150 V technology was designed to fulfill the requirements of both high and low switching frequency applications, in hard and soft switching.

Technical Specifications

Parameters and characteristics for this part

SpecificationISC044N15NM6ATMA1
Current - Continuous Drain (Id) (Ta)17.1 A
Current - Continuous Drain (Id) (Tc)156 A
Drain to Source Voltage (Vdss)150 V
Drive Voltage (Max Rds On)8 V
Drive Voltage (Min Rds On)15 V
FET TypeN-Channel
Gate Charge (Max)72 nC
Input Capacitance (Ciss) (Max)5100 pF
Mounting TypeSurface Mount
Operating Temperature (Max)175 °C
Operating Temperature (Min)-55 °C
Package / Case8-PowerTDFN
Package NamePG-TSON-8-3
Power Dissipation (Max)250 W, 3 W
Rds On (Max)4.2 mOhm
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max)4 V

Pricing

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CAD

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Documents

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