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FM25V05-G

FM25V05-G

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INFINEON

FERROELECTRIC RAM (FRAM), 512 KBIT, 64K X 8BIT, SPI, 40 MHZ, 2 V TO 3.6 V SUPPLY, SOIC-8

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FM25V05-G

FM25V05-G

Active
INFINEON

FERROELECTRIC RAM (FRAM), 512 KBIT, 64K X 8BIT, SPI, 40 MHZ, 2 V TO 3.6 V SUPPLY, SOIC-8

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Description

General part information

FM25V05-G

FM25V05-G is a 512-Kbit (64K × 8) serial (SPI) F-RAM memory. It is a 512-Kbit non-volatile memory employing an advanced ferroelectric process. A ferroelectric random access memory or F-RAM is non-volatile and performs reads and writes similar to RAM. It provides reliable data retention for 151 years while eliminating the complexities, overhead, and system-level reliability problems caused by serial flash, EEPROM, and other non-volatile memories. The FM25V05 is capable of supporting 10^14 read/write cycles, or 100 million times more write cycles than EEPROM. These capabilities make the FM25V05 ideal for non-volatile memory applications, requiring frequent or rapid writes. Examples range from data collection, where the number of write cycles may be critical, to demanding industrial controls where the long write time of serial flash or EEPROM can cause data loss. The FM25V05 provides substantial benefits to users of serial EEPROM or flash as a hardware drop-in replacement.

Technical Specifications

Parameters and characteristics for this part

SpecificationFM25V05-G
Clock Frequency40 MHz
Memory Depth64 K
Memory FormatFRAM
Memory Interface (Type)SPI
Memory Size64 kB
Memory TypeNon-Volatile
Memory Width8 bit
Mounting TypeSurface Mount
Operating Temperature (Max)85 °C
Operating Temperature (Min)-40 °C
Package Length0.154 in
Package Name8-SOIC
Package Width3.9 mm
TechnologyFRAM (Ferroelectric RAM)
Voltage - Supply (Maximum)3.6 V
Voltage - Supply (Minimum)2 V

Pricing

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