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HGTP3N60A4D

HGTP3N60A4D

Obsolete
ON Semiconductor

IGBT 600V 17A TO-220-3

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HGTP3N60A4D

HGTP3N60A4D

Obsolete
ON Semiconductor

IGBT 600V 17A TO-220-3

Find alt

Description

General part information

HGTP3N60A4D

IGBT 600V 17A TO-220-3

Technical Specifications

Parameters and characteristics for this part

SpecificationHGTP3N60A4D
Current - Collector (Ic) (Max)17 A
Current - Collector Pulsed (Icm)40 A
Gate Charge21 nC
Input TypeStandard
Mounting TypeThrough Hole
Operating Temperature (Max)150 °C
Operating Temperature (Min)-55 °C
Package / CaseTO-220-3
Package NameTO-220-3
Power - Max70 VA
Reverse Recovery Time (trr)29 ns
Switching Energy (Off)25 µJ
Switching Energy (On)37 µJ
Td (off) @ 25°C73 ns
Td (on) @ 25°C6 ns
Test Condition Current3 A
Test Condition Resistance50 Ohm
Test Condition Voltage390 V
Test Condition Voltage (Secondary)15 V
Vce(on) (Max)2.7 V
Voltage - Collector Emitter Breakdown (Max)600 V

Pricing

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CAD

3D models and CAD resources for this part

Documents

Technical documentation and resources