BSS123-7-F

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Diodes Inc

POWER MOSFET, N CHANNEL, 100 V, 170 MA, 6 OHM, SOT-23, 3 PINS, SURFACE MOUNT

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BSS123-7-F

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Diodes Inc

POWER MOSFET, N CHANNEL, 100 V, 170 MA, 6 OHM, SOT-23, 3 PINS, SURFACE MOUNT

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Technical Specifications

Parameters and characteristics for this part

Specification	BSS123-7-F

Current - Continuous Drain (Id) @ 25°C	170 mA
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	60 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SOT-23-3, TO-236-3, SC-59
Power Dissipation (Max) [Max]	300 mW
Rds On (Max) @ Id, Vgs	6 Ohm
Supplier Device Package	SOT-23-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2 V

BSS123Q Series

N-Channel Enhancement Mode MOSFET

Part	Technology	Supplier Device Package	Power Dissipation (Max) [Max]	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs	Vgs(th) (Max) @ Id	Mounting Type	FET Type	Rds On (Max) @ Id, Vgs	Drive Voltage (Max Rds On, Min Rds On)	Current - Continuous Drain (Id) @ 25°C	Package / Case	Operating Temperature [Min]	Operating Temperature [Max]	Vgs (Max)	Drain to Source Voltage (Vdss)	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs [Max]	Grade	Qualification
Diodes Inc BSS123K-13	MOSFET (Metal Oxide)	SOT-23-3	500 mW	38 pF	1.3 nC	2 V	Surface Mount	N-Channel	6 Ohm	4.5 V 10 V	230 mA	SC-59 SOT-23-3 TO-236-3	-55 °C	150 °C	20 V	100 V
Diodes Inc BSS123-7-F	MOSFET (Metal Oxide)	SOT-23-3	300 mW	60 pF		2 V	Surface Mount	N-Channel	6 Ohm	10 V	170 mA	SC-59 SOT-23-3 TO-236-3	-55 °C	150 °C	20 V	100 V
Diodes Inc BSS123W-7-F	MOSFET (Metal Oxide)	SOT-323		60 pF		2 V	Surface Mount	N-Channel	6 Ohm	4.5 V 10 V	170 mA	SC-70 SOT-323	-55 °C	150 °C	20 V	100 V	200 mW
Diodes Inc BSS123TA	MOSFET (Metal Oxide)	SOT-23-3		20 pF		2 V	Surface Mount	N-Channel		4.5 V 10 V	170 mA	SC-59 SOT-23-3 TO-236-3	-55 °C	150 °C	20 V	100 V	360 mW	6 Ohm
Diodes Inc BSS123Q-7	MOSFET (Metal Oxide)	SOT-23-3	300 mW	60 pF		2 V	Surface Mount	N-Channel	6 Ohm	4.5 V 10 V	170 mA	SC-59 SOT-23-3 TO-236-3	-55 °C	150 °C	20 V	100 V			Automotive	AEC-Q101

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Cut Tape (CT)	1	$ 0.22
		10	$ 0.14
		100	$ 0.09
		500	$ 0.06
		1000	$ 0.06
	Digi-Reel®	1	$ 0.22
		10	$ 0.14
		100	$ 0.09
		500	$ 0.06
		1000	$ 0.06
	Tape & Reel (TR)	3000	$ 0.04
		6000	$ 0.03
		9000	$ 0.03
		15000	$ 0.03
		21000	$ 0.03
		30000	$ 0.03

Description

General part information

BSS123Q Series

These N-Channel enhancement mode field effect transistors are produced using Diodes Incorporated’s proprietary, high density and advanced trench technology. These products have been designed to minimize on-state resistance while providing rugged, reliable and fast switching performance. These products are particularly suited for low-voltage, low-current applications such as: small servo motor controls, power MOSFET gate drivers, and switching applications.

BSS123-7-F

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BSS123-7-F

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Technical Specifications

BSS123Q Series

Pricing

Description

BSS123Q Series

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BSS123Q Series