DMN21D2UFB-7

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Diodes Inc

70V N-CHANNEL ENHANCEMENT MODE MOSFET

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Diodes Inc

70V N-CHANNEL ENHANCEMENT MODE MOSFET

Technical Specifications

Parameters and characteristics for this part

Specification	DMN21D2UFB-7

Current - Continuous Drain (Id) @ 25°C	760 mA
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On, Min Rds On)	4.5 V, 1.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	0.93 nC
Input Capacitance (Ciss) (Max) @ Vds	27.6 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	3-UFDFN
Power Dissipation (Max)	380 mW
Rds On (Max) @ Id, Vgs [Max]	990 mOhm
Supplier Device Package	X1-DFN1006-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	12 V
Vgs(th) (Max) @ Id	1 V

70V N-Channel Enhancement Mode MOSFET

Part	Power Dissipation (Max)	FET Type	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs [Max]	Vgs(th) (Max) @ Id	Supplier Device Package	Drive Voltage (Max Rds On, Min Rds On)	Mounting Type	Operating Temperature [Min]	Operating Temperature [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]	Input Capacitance (Ciss) (Max) @ Vds	Package / Case	Technology	Vgs (Max)
Diodes Inc DMN21D2UFB-7	380 mW	N-Channel	760 mA	20 V	990 mOhm	1 V	X1-DFN1006-3	1.5 V 4.5 V	Surface Mount	-55 °C	150 °C	0.93 nC	27.6 pF	3-UFDFN	MOSFET (Metal Oxide)	12 V

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General part information

70V N-Channel Enhancement Mode MOSFET

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