Description
General part information
EPC2102
MOSFET 2N-CH 60V 23A DIE
Technical Specifications
Parameters and characteristics for this part
| Specification | EPC2102 |
|---|---|
| Channel Count | 2 |
| Configuration | N-Channel |
| Configuration - Features | Half Bridge |
| Current - Continuous Drain (Id) | 23 A |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Max) | 6.8 nC |
| Input Capacitance (Ciss) (Max) | 830 pF |
| Mounting Type | Surface Mount |
| Operating Temperature (Max) | 150 °C |
| Operating Temperature (Min) | -40 °C |
| Package / Case | Die |
| Package Name | Die |
| Rds On (Max) | 4.4 mOhm |
| Technology | GaNFET (Gallium Nitride) |
| Vgs(th) (Max) | 2.5 V |
Pricing
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CAD
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Documents
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