MG600Q2YMS3(DAE)
ActiveToshiba Semiconductor and Storage
SIC MOSFET MODULE, 1200 V, 600 A
MG600Q2YMS3(DAE)
ActiveToshiba Semiconductor and Storage
SIC MOSFET MODULE, 1200 V, 600 A
Description
General part information
MG600Q2YMS3(DAE)
SIC MOSFET MODULE, 1200 V, 600 A
Technical Specifications
Parameters and characteristics for this part
| Specification | MG600Q2YMS3(DAE) |
|---|---|
| Channel Count | 2 |
| Configuration | N-Channel |
| Configuration - Features | Half Bridge |
| Current - Continuous Drain (Id) (Tc) | 600 A |
| Drain to Source Voltage (Vdss) | 1200 V |
| Input Capacitance (Ciss) (Max) | 53000 pF |
| Mounting Type | Chassis Mount |
| Operating Temperature | 150 °C |
| Package / Case | Module |
| Power - Max (Tc) | 2 kW |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) | 5.6 V |
Pricing
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