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IMZA120R030M1HXKSA1

IMZA120R030M1HXKSA1

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INFINEON

SILICON CARBIDE MOSFET, SINGLE, N CHANNEL, 70 A, 1.2 KV, 0.0409 OHM, TO-247

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IMZA120R030M1HXKSA1

IMZA120R030M1HXKSA1

Active
INFINEON

SILICON CARBIDE MOSFET, SINGLE, N CHANNEL, 70 A, 1.2 KV, 0.0409 OHM, TO-247

Find alt

Description

General part information

IMZA120R030M1HXKSA1

N-Channel 1200 V 70A (Tc) 273W (Tc) Through Hole PG-TO247-4-U02

Technical Specifications

Parameters and characteristics for this part

SpecificationIMZA120R030M1HXKSA1
Current - Continuous Drain (Id) (Tc)70 A
Drain to Source Voltage (Vdss)1200 V
Drive Voltage (Max Rds On)15 V
Drive Voltage (Min Rds On)18 V
FET TypeN-Channel
Gate Charge (Max)68 nC
Input Capacitance (Ciss) (Max)2160 pF
Mounting TypeThrough Hole
Operating Temperature (Max)175 °C
Operating Temperature (Min)-55 °C
Package / CaseTO-247-4
Package NamePG-TO247-4-U02
Power Dissipation (Max)273 W
Rds On (Max)40.9 mOhm
TechnologySiCFET (Silicon Carbide)
Vgs (Max) Negative-7 V
Vgs (Max) Positive20 V
Vgs(th) (Max)5.2 V

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