Zenode.ai Logo
SIJ188DP-T1-GE3

SIJ188DP-T1-GE3

Active
Vishay Dale

MOSFET N-CH 60V 25.5A/92.4A PPAK

Find alt
SIJ188DP-T1-GE3

SIJ188DP-T1-GE3

Active
Vishay Dale

MOSFET N-CH 60V 25.5A/92.4A PPAK

Find alt

Description

General part information

SIJ188DP-T1-GE3

MOSFET N-CH 60V 25.5A/92.4A PPAK

Technical Specifications

Parameters and characteristics for this part

SpecificationSIJ188DP-T1-GE3
Current - Continuous Drain (Id) (Ta)25.5 A
Drain to Source Voltage (Vdss)60 V
Drive Voltage (Max Rds On)7.5 V
Drive Voltage (Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Max)44 nC, 44 nC
Input Capacitance (Ciss) (Max)1920 pF
Mounting TypeSurface Mount
Operating Temperature (Max)150 °C
Operating Temperature (Min)-55 °C
Package / CasePowerPAK® SO-8
Package NamePowerPAK® SO-8
Power Dissipation (Max)65.7 W, 5 W
Rds On (Max)3.85 mOhm
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max)3.6 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Sign in to see pricing

Create a free account to access distributor pricing data.

CAD

3D models and CAD resources for this part

Documents

Technical documentation and resources