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Description

General part information

AOK015V65X2

650V SILICON CARBIDE MOSFET

Technical Specifications

Parameters and characteristics for this part

SpecificationAOK015V65X2
Current - Continuous Drain (Id) (Tc)96 A
Drain to Source Voltage (Vdss)650 V
Drive Voltage (Max Rds On, Min Rds On)15 V
FET TypeN-Channel
Gate Charge (Max)152 nC
Input Capacitance (Ciss) (Max)4880 pF
Mounting TypeThrough Hole
Operating Temperature (Max)175 °C
Operating Temperature (Min)-55 °C
Package / CaseTO-247-3
Package NameTO-247
Power Dissipation (Max)312 W
Rds On (Max)22 mOhm
TechnologySiCFET (Silicon Carbide)
Vgs (Max) Negative-5 V
Vgs (Max) Positive15 V
Vgs(th) (Max)3.5 V

Pricing

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