2N3709 TIN/LEAD
ObsoleteCentral Semiconductor Corp
BIPOLAR TRANSISTORS - BJT 30V,200MA,625MW THROUGH-HOLE TRANSISTOR-SMALL SIGNAL (<=1A) NPN LOW NOISE
2N3709 TIN/LEAD
ObsoleteCentral Semiconductor Corp
BIPOLAR TRANSISTORS - BJT 30V,200MA,625MW THROUGH-HOLE TRANSISTOR-SMALL SIGNAL (<=1A) NPN LOW NOISE
Description
General part information
2N3709 TIN/LEAD
BIPOLAR TRANSISTORS - BJT 30V,200MA,625MW THROUGH-HOLE TRANSISTOR-SMALL SIGNAL (<=1A) NPN LOW NOISE
Technical Specifications
Parameters and characteristics for this part
| Specification | 2N3709 TIN/LEAD |
|---|---|
| Current - Collector (Ic) (Max) | 0.2 mA |
| Current - Collector Cutoff (Max) | 100 nA |
| DC Current Gain (hFE) (Min) | 45 |
| Mounting Type | Through Hole |
| Operating Temperature (Max) | 150 °C |
| Operating Temperature (Min) | -65 °C |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) |
| Package Name | TO-92-3 |
| Power - Max | 625 mW |
| Transistor Type | NPN |
| Vce Saturation (Max) | 1 V |
| Voltage - Collector Emitter Breakdown (Max) | 30 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Sign in to see pricing
Create a free account to access distributor pricing data.
CAD
3D models and CAD resources for this part
Documents
Technical documentation and resources