FMOS3416E-Q1-H
ActiveTaiwan Semiconductor Corporation
6.5A 20V N-CHANNEL ENHANCEMENT M
FMOS3416E-Q1-H
ActiveTaiwan Semiconductor Corporation
6.5A 20V N-CHANNEL ENHANCEMENT M
Description
General part information
FMOS3416E-Q1-H
6.5A 20V N-CHANNEL ENHANCEMENT M
Technical Specifications
Parameters and characteristics for this part
| Specification | FMOS3416E-Q1-H |
|---|---|
| Current - Continuous Drain (Id) (Tc) | 6.5 A |
| Drive Voltage (Additional) | 4.5 V |
| Drive Voltage (Max Rds On) | 1.8 V |
| Drive Voltage (Min Rds On) | 2.5 V |
| FET Feature | Logic Level Gate |
| FET Feature Drive Voltage | 4 V |
| FET Type | N-Channel |
| Grade | Automotive |
| Mounting Type | Surface Mount |
| Operating Temperature (Max) | 150 °C |
| Operating Temperature (Min) | -55 °C |
| Package / Case | SOT-23-3 |
| Package Name | SOT-23 |
| Power Dissipation (Max) | 1.4 W |
| Qualification | AEC-Q101 |
| Rds On (Max) | 22 mOhm |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 8 V |
| Vgs(th) (Max) | 1 V |
Pricing
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CAD
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