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INFINEON S25FL128SAGBHIZ00

S80KS2563GABHI020

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INFINEON

DRAM, HYPERRAM, 256 MBIT, 32M X 8BIT, 200 MHZ, FBGA, 24 PINS

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INFINEON S25FL128SAGBHIZ00

S80KS2563GABHI020

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INFINEON

DRAM, HYPERRAM, 256 MBIT, 32M X 8BIT, 200 MHZ, FBGA, 24 PINS

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Description

General part information

S80KS2563GABHI020

S80KS2563GABHI020 is a 256Mb, high-speed CMOS, HYPERRAM™ self-refresh dynamic RAM (DRAM) with Octal xSPI interface. The DRAM array uses dynamic cells that require periodic refresh. Refresh control logic within the device manages the refresh operations on the DRAM array when the memory is not being actively read or written by xSPI interface host. Since host is not required to manage any refresh operations, the DRAM array appears to the host as though memory uses static cells that retain data without refresh. Hence, memory is more accurately described as pseudo static RAM (PSRAM). Since DRAM cells cannot be refreshed during a read or write transaction, there is a requirement that host limit read or write burst transfers lengths to allow internal logic refresh operations when they are needed. The host must confine the duration of transactions and allow additional initial access latency, at the beginning of a new transaction, if the memory indicates a refresh operation is needed.

Technical Specifications

Parameters and characteristics for this part

SpecificationS80KS2563GABHI020
Access Time35 ns
Clock Frequency200 MHz
Memory Depth32 M
Memory FormatPSRAM
Memory Interface (Type)SPI - Octal I/O
Memory Size256 Mbit
Memory TypeVolatile
Memory Width8 bit
Mounting TypeSurface Mount
Operating Temperature (Max)85 °C
Operating Temperature (Min)-40 °C
Package / Case24-VBGA
Package Length6 mm
Package Name24-FBGA
Package Width8 mm
TechnologyPSRAM (Pseudo SRAM)
Voltage - Supply (Maximum)2 V
Voltage - Supply (Minimum)1.7 V
Write Cycle Time - Page35 ns
Write Cycle Time - Word35 ns

Pricing

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    S80KS2563GABHI020 | INFINEON | Zenode.ai