Description
General part information
IPD50N06S4L08ATMA2
IPD50N06S4L-08 IS AN AUTOMOTIVE MOSFET OFFERING 60V, N-CH, 7.8 MΩ MAX, DPAK, OPTIMOS™-T2, AEC Q101 QUALIFIED, 175°C OPERATING TEMP, ROHS COMPLIANT.
Technical Specifications
Parameters and characteristics for this part
| Specification | IPD50N06S4L08ATMA2 |
|---|---|
| Current - Continuous Drain (Id) (Tc) | 50 A |
| Drain to Source Voltage (Vdss) | 60 V |
| Drive Voltage (Max Rds On) | 4.5 V |
| Drive Voltage (Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Max) | 64 nC |
| Grade | Automotive |
| Input Capacitance (Ciss) (Max) | 4780 pF |
| Mounting Type | Surface Mount |
| Operating Temperature (Max) | 175 °C |
| Operating Temperature (Min) | -55 °C |
| Package / Case | SC-63, DPAK (2 Leads + Tab), TO-252-3 |
| Package Name | PG-TO252-3-11 |
| Power Dissipation (Max) | 71 W |
| Qualification | AEC-Q101 |
| Rds On (Max) | 7.8 mOhm |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 16 V |
| Vgs(th) (Max) | 2.2 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Sign in to see pricing
Create a free account to access distributor pricing data.
CAD
3D models and CAD resources for this part
Documents
Technical documentation and resources
No documents available