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IGK120B041SXTSA1

IGK120B041SXTSA1

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INFINEON

MV GAN DISCRETES

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IGK120B041SXTSA1

IGK120B041SXTSA1

Active
INFINEON

MV GAN DISCRETES

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Description

General part information

IGK120B041SXTSA1

MV GAN DISCRETES

Technical Specifications

Parameters and characteristics for this part

SpecificationIGK120B041SXTSA1
Current - Continuous Drain (Id) (Tc)30 A
Drain to Source Voltage (Vdss)40 V
Drive Voltage (Max Rds On, Min Rds On)5 V
FET TypeN-Channel
Gate Charge (Max)4.4 nC, 4.4 nC, 4.4 nC
Mounting TypeSurface Mount
Operating Temperature (Max)125 °C
Operating Temperature (Min)-40 °C
Package / CaseWLBGA, 16-UFBGA
Package NameSG-UFWLB-16-2
TechnologyGaNFET (Gallium Nitride)
Vgs(th) (Max)2.9 V

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