BYVB32-200HM3/I
ActiveVishay General Semiconductor - Diodes Division
DIODE ARRAY GP 200V 18A TO263AB
BYVB32-200HM3/I
ActiveVishay General Semiconductor - Diodes Division
DIODE ARRAY GP 200V 18A TO263AB
Description
General part information
BYVB32-200HM3/I
DIODE ARRAY GP 200V 18A TO263AB
Technical Specifications
Parameters and characteristics for this part
| Specification | BYVB32-200HM3/I |
|---|---|
| Current - Average Rectified (Io) (per Diode) | 18 A |
| Current - Reverse Leakage | 10 µA |
| Diode Configuration | Common Cathode |
| Diode Pair Count | 1 pair |
| Grade | Automotive |
| Mounting Type | Surface Mount |
| Operating Temperature - Junction (Max) | 150 °C |
| Operating Temperature - Junction (Min) | -65 °C |
| Package / Case | D2PAK (2 Leads + Tab), TO-263-3, TO-263AB |
| Package Name | TO-263AB (D2PAK) |
| Qualification | AEC-Q101 |
| Reverse Recovery Time (trr) | 25 ns |
| Speed - Fast Recovery (Maximum) | 500 ns |
| Speed - Fast Recovery (Minimum) | 200 mA |
| Technology | Standard |
| Voltage - DC Reverse (Vr) (Max) | 200 V |
| Voltage - Forward (Vf) (Max) | 1.15 V |
Pricing
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CAD
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