
RFD16N05L
ActiveON Semiconductor
N-CHANNEL POWER MOSFET

RFD16N05L
ActiveON Semiconductor
N-CHANNEL POWER MOSFET
Description
General part information
RFD16N05L
N-CHANNEL POWER MOSFET
Technical Specifications
Parameters and characteristics for this part
| Specification | RFD16N05L |
|---|---|
| Current - Continuous Drain (Id) (Tc) | 16 A |
| Drain to Source Voltage (Vdss) | 50 V |
| Drive Voltage (Max Rds On) | 4 V |
| Drive Voltage (Min Rds On) | 5 V |
| FET Type | N-Channel |
| Gate Charge (Max) | 80 nC, 80 nC |
| Mounting Type | Through Hole |
| Operating Temperature (Max) | 150 °C |
| Operating Temperature (Min) | -55 °C |
| Package / Case | TO-251-3 Short Leads, TO-251AA, IPAK |
| Package Name | TO-251AA |
| Power Dissipation (Max) | 60 W |
| Rds On (Max) | 47 mOhm |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 10 V |
| Vgs(th) (Max) | 2 V |
Pricing
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