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IVCR1412SR

IVCR1412SR

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Inventchip

NEXTDRIVE COMPACT SIC MOSFET DR

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IVCR1412SR

IVCR1412SR

Active
Inventchip

NEXTDRIVE COMPACT SIC MOSFET DR

Find alt

Description

General part information

IVCR1412SR

NEXTDRIVE COMPACT SIC MOSFET DR

Technical Specifications

Parameters and characteristics for this part

SpecificationIVCR1412SR
Channel TypeSingle
Current - Peak Output (Sink)4 A
Current - Peak Output (Source)4 A
Driven ConfigurationLow-Side
Fall Time (Typ)6 ns
Gate TypeSi, GaN, IGBT, SiC MOSFET
Input TypeNon-Inverting
Mounting TypeSurface Mount
Number of Drivers1
Operating Temperature (Max)125 °C
Operating Temperature (Min)-40 °C
Package / CaseSOT-23-6
Package NameSOT-23-6
Rise Time (Typ)12 ns
Voltage - Supply (Maximum)25 V
Voltage - Supply (Minimum)4.5 V

Pricing

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CAD

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Documents

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