3N251
ObsoleteON Semiconductor
BRIDGE RECT 1P 800V 1.5A KBPM
3N251
ObsoleteON Semiconductor
BRIDGE RECT 1P 800V 1.5A KBPM
Description
General part information
3N251
BRIDGE RECT 1P 800V 1.5A KBPM
Technical Specifications
Parameters and characteristics for this part
| Specification | 3N251 |
|---|---|
| Current - Average Rectified (Io) | 1.5 A |
| Current - Reverse Leakage | 5 µA |
| Diode Type | Single Phase |
| Mounting Type | Through Hole |
| Operating Temperature (Max) | 165 °C |
| Operating Temperature (Min) | -55 °C |
| Package / Case | KBPM, 4-SIP |
| Package Name | KBPM |
| Technology | Standard |
| Voltage - Forward (Vf) (Max) | 1 V, 1 V |
| Voltage - Peak Reverse (Max) | 800 V |
Pricing
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CAD
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Documents
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