DI016N06PQ2-AQ
ActiveDiotec Semiconductor
MOSFET 2N-CH 60V 16A 8TDSON
DI016N06PQ2-AQ
ActiveDiotec Semiconductor
MOSFET 2N-CH 60V 16A 8TDSON
Description
General part information
DI016N06PQ2-AQ
MOSFET 2N-CH 60V 16A 8TDSON
Technical Specifications
Parameters and characteristics for this part
| Specification | DI016N06PQ2-AQ |
|---|---|
| Channel Count | 2 |
| Configuration | N-Channel |
| Configuration - Features | Dual |
| Current - Continuous Drain (Id) (Tc) | 16 A |
| Drain to Source Voltage (Vdss) | 60 V |
| FET Feature | Logic Level Gate |
| Gate Charge (Max) | 19 nC |
| Grade | Automotive |
| Input Capacitance (Ciss) (Max) | 1260 pF |
| Mounting Type | Surface Mount |
| Operating Temperature (Max) | 150 °C |
| Operating Temperature (Min) | -55 °C |
| Package / Case | 8-PowerTDFN |
| Package Name | TDSON-8-4 |
| Power - Max (Tc) | 16.7 W |
| Qualification | AEC-Q101 |
| Rds On (Max) | 33 mOhm |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) | 2.5 V |
Pricing
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CAD
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Documents
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