Description
General part information
BSC007N04LS6ATMA1
TheOptiMOS™ 6 power MOSFET 40 V familyis optimized for a variety of applications and circuits, such as synchronous rectification in switched mode power supplies (SMPS) in servers, desktop PCs, wireless chargers, quick chargers and ORing circuits. Improvements in on-state resistance (RDS(on)) and figure of merits (FOM - RDS(on)x Qgand Qgd) enable designers to increase efficiency, allowing easier thermal design and less paralleling, leading to system cost reduction.
Technical Specifications
Parameters and characteristics for this part
| Specification | BSC007N04LS6ATMA1 |
|---|---|
| Current - Continuous Drain (Id) (Tc) | 381 A |
| Drain to Source Voltage (Vdss) | 40 V |
| Drive Voltage (Max Rds On) | 4.5 V |
| Drive Voltage (Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Max) | 94 nC |
| Input Capacitance (Ciss) (Max) | 8400 pF |
| Mounting Type | Surface Mount |
| Operating Temperature (Max) | 175 °C |
| Operating Temperature (Min) | -55 °C |
| Package / Case | 8-PowerTDFN |
| Package Name | PG-TDSON-8-6 |
| Power Dissipation (Max) | 188 W |
| Rds On (Max) | 0.7 mOhm |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) | 2.3 V |
Pricing
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