IRF9Z34NSTRLPBF

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Infineon Technologies

MOSFET, P-CH, 55V, 19A, TO-263 ROHS COMPLIANT: YES

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Infineon Technologies

MOSFET, P-CH, 55V, 19A, TO-263 ROHS COMPLIANT: YES

Technical Specifications

Parameters and characteristics for this part

Specification	IRF9Z34NSTRLPBF

Current - Continuous Drain (Id) @ 25°C	19 A
Drain to Source Voltage (Vdss)	55 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	35 nC
Input Capacitance (Ciss) (Max) @ Vds	620 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Power Dissipation (Max)	68 W, 3.8 W
Rds On (Max) @ Id, Vgs	100 mOhm
Supplier Device Package	D2PAK
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

Part	Input Capacitance (Ciss) (Max) @ Vds	Supplier Device Package	Current - Continuous Drain (Id) @ 25°C	Vgs (Max)	Mounting Type	Package / Case	Operating Temperature [Min]	Operating Temperature [Max]	Technology	Rds On (Max) @ Id, Vgs	Power Dissipation (Max)	FET Type	Gate Charge (Qg) (Max) @ Vgs [Max]	Vgs(th) (Max) @ Id	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On)
Infineon Technologies IRF9Z34NPBF	620 pF	TO-220AB	19 A	20 V	Through Hole	TO-220-3	-55 °C	175 ░C	MOSFET (Metal Oxide)	100 mOhm	68 W	P-Channel	35 nC	4 V	55 V	10 V
Infineon Technologies IRF9Z34NSTRLPBF	620 pF	D2PAK	19 A	20 V	Surface Mount	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	-55 °C	175 ░C	MOSFET (Metal Oxide)	100 mOhm	3.8 W 68 W	P-Channel	35 nC	4 V	55 V	10 V

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