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BSB165N15NZ3GXUMA2

BSB165N15NZ3GXUMA2

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INFINEON

TRENCH >=100V

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BSB165N15NZ3GXUMA2

BSB165N15NZ3GXUMA2

Active
INFINEON

TRENCH >=100V

Find alt

Description

General part information

BSB165N15NZ3GXUMA2

N-Channel 150 V 9A (Ta), 45A (Tc) 2.8W (Ta), 78W (Tc) Surface Mount MG-WDSON-2-9

Technical Specifications

Parameters and characteristics for this part

SpecificationBSB165N15NZ3GXUMA2
Current - Continuous Drain (Id) (Ta)9 A
Current - Continuous Drain (Id) (Tc)45 A
Drain to Source Voltage (Vdss)150 V
Drive Voltage (Max Rds On)8 V
Drive Voltage (Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Max)35 nC
Input Capacitance (Ciss) (Max)2800 pF
Mounting TypeSurface Mount
Operating Temperature (Max)150 °C
Operating Temperature (Min)-40 °C
Package / CaseDirectFET™ Isometric MZ
Package NameMG-WDSON-2-9
Power Dissipation (Max)78 W, 2.8 W
Rds On (Max)16.5 mOhm
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max)4 V

Pricing

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CAD

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Documents

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