MBR2X100A180
ActiveGeneSiC Semiconductor
DIODE MODULES 180V 200A FWD SCHOTTKY
MBR2X100A180
ActiveGeneSiC Semiconductor
DIODE MODULES 180V 200A FWD SCHOTTKY
Description
General part information
MBR2X100A180
DIODE MODULES 180V 200A FWD SCHOTTKY
Technical Specifications
Parameters and characteristics for this part
| Specification | MBR2X100A180 |
|---|---|
| Current - Average Rectified (Io) (per Diode) | 100 A |
| Current - Reverse Leakage | 3 mA |
| Diode Configuration | Independent |
| Diode Count | 2 |
| Mounting Type | Chassis Mount |
| Operating Temperature - Junction (Max) | 150 °C |
| Operating Temperature - Junction (Min) | -40 °C |
| Package / Case | SOT-227-4, miniBLOC |
| Package Name | SOT-227 |
| Speed - Fast Recovery (Maximum) | 500 ns |
| Speed - Fast Recovery (Minimum) | 200 mA |
| Technology | Schottky |
| Voltage - DC Reverse (Vr) (Max) | 180 V |
| Voltage - Forward (Vf) (Max) | 920 mV |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Sign in to see pricing
Create a free account to access distributor pricing data.
CAD
3D models and CAD resources for this part
Documents
Technical documentation and resources