S3BB M4G

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Taiwan Semiconductor Corporation

DIODE GEN PURP 100V 3A DO214AA

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Unknown

Taiwan Semiconductor Corporation

DIODE GEN PURP 100V 3A DO214AA

Technical Specifications

Parameters and characteristics for this part

Specification	S3BB M4G

Capacitance @ Vr, F	40 pF
Current - Average Rectified (Io)	3 A
Current - Reverse Leakage @ Vr	10 µA
Mounting Type	Surface Mount
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-55 °C
Package / Case	SMB, DO-214AA
Reverse Recovery Time (trr)	1500 ns
Speed	Standard Recovery >500ns
Speed	200 mA
Supplier Device Package	SMB
Supplier Device Package	DO-214AA
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	100 V
Voltage - Forward (Vf) (Max) @ If	1.15 V

Part	Reverse Recovery Time (trr)	Voltage - Forward (Vf) (Max) @ If	Speed	Speed	Mounting Type	Voltage - DC Reverse (Vr) (Max) [Max]	Capacitance @ Vr, F	Supplier Device Package	Supplier Device Package	Package / Case	Technology	Current - Reverse Leakage @ Vr	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Current - Average Rectified (Io)
Taiwan Semiconductor Corporation S3BB M4G	1500 ns	1.15 V	Standard Recovery >500ns	200 mA	Surface Mount	100 V	40 pF	SMB	DO-214AA	DO-214AA SMB	Standard	10 µA	150 °C	-55 °C	3 A
Taiwan Semiconductor Corporation S3B V7G	1500 ns		Standard Recovery >500ns	200 mA	Surface Mount	100 V	60 pF		DO-214AB (SMC)	DO-214AB SMC	Standard	10 µA	150 °C	-55 °C	3 A

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Diode 100 V 3A Surface Mount DO-214AA (SMB)

Technical documentation and resources