STTA806G

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STMicroelectronics

DIODE GEN PURP 600V 8A D2PAK

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STMicroelectronics

DIODE GEN PURP 600V 8A D2PAK

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General part information

Diode 600 V 8A Surface Mount D2PAK

Technical documentation and resources

Specification	STTA806G	STTA806 Series

Current - Average Rectified (Io)	8 A	8 A
Current - Reverse Leakage @ Vr	100 µA	100 µA
Mounting Type	Surface Mount	Through Hole, Surface Mount
Operating Temperature - Junction	150 °C	150 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263AB, TO-263-3	TO-220-2, D2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Reverse Recovery Time (trr)	52 ns	52 ns
Speed	200 mA, 500 ns	200 - 500 mA
Supplier Device Package	D2PAK	TO-220AC, D2PAK
Technology	Standard	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	600 V	600 V
Voltage - Forward (Vf) (Max) @ If	1.75 V	1.75 V

Part	Operating Temperature - Junction	Voltage - Forward (Vf) (Max) @ If	Current - Reverse Leakage @ Vr	Voltage - DC Reverse (Vr) (Max) [Max]	Current - Average Rectified (Io)	Reverse Recovery Time (trr)	Supplier Device Package	Mounting Type	Speed	Package / Case	Technology
STMicroelectronics STTA806D	150 °C	1.75 V	100 µA	600 V	8 A	52 ns	TO-220AC	Through Hole	200 mA, 500 ns	TO-220-2	Standard
STMicroelectronics STTA806G	150 °C	1.75 V	100 µA	600 V	8 A	52 ns	D2PAK	Surface Mount	200 mA, 500 ns	D2PAK (2 Leads + Tab), TO-263-3, TO-263AB	Standard