Description
General part information
IQDH35N03LM5ATMA1
The power MOSFET IQDH35N03LM5 comes in a PQFN 5x6 Source-Down package. It's industry's lowest RDS(on)of 0,35 mOhm combined with outstanding thermal performance for easy power loss management. This enables higher system efficiency and power density for a large variety of end applications like SMPS, telecom power, and intermediate bus conversion in high-performance computing, like hyper-scale data centers and AI-server farms.
Technical Specifications
Parameters and characteristics for this part
| Specification | IQDH35N03LM5ATMA1 |
|---|---|
| Current - Continuous Drain (Id) (Ta) | 66 A |
| Current - Continuous Drain (Id) (Tc) | 700 A |
| Drain to Source Voltage (Vdss) | 30 V |
| Drive Voltage (Max Rds On) | 4.5 V |
| Drive Voltage (Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Max) | 262 nC |
| Input Capacitance (Ciss) (Max) | 18000 pF |
| Mounting Type | Surface Mount |
| Operating Temperature (Max) | 150 °C |
| Operating Temperature (Min) | -55 °C |
| Package / Case | 8-PowerTDFN |
| Package Name | PG-TSON-8-9 |
| Power Dissipation (Max) | 278 W, 2.5 W |
| Rds On (Max) | 0.35 mOhm |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) | 2 V |
Pricing
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