TDINV3000W050B-KIT

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EVAL BOARD FOR TP65H050G4WS

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Transphorm

EVAL BOARD FOR TP65H050G4WS

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Distributor	Package	Quantity	$

Digikey	Box	1	$ 816.00

General part information

TP65H050G4WS - DC/AC Inverter 1, Non-Isolated Outputs Evaluation Board

Technical documentation and resources

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Parameters and characteristics commom to parts in this series

Specification	TDINV3000W050B-KIT	TP65H050 Series

Board Type	Fully Populated	Fully Populated
Current - Continuous Drain (Id) @ 25°C	-	34 A
Drain to Source Voltage (Vdss)	-	650 V
Drive Voltage (Max Rds On, Min Rds On)	-	10 V
FET Type	-	N-Channel
Frequency - Switching	50 kHz	50 kHz
Gate Charge (Qg) (Max) @ Vgs	-	24 nC
Input Capacitance (Ciss) (Max) @ Vds	-	1000 pF
Main Purpose	DC/AC Inverter	DC/AC Inverter
Mounting Type	-	Through Hole
Operating Temperature	-	-55 °C
Operating Temperature	-	150 °C
Outputs and Type	Non-Isolated	Non-Isolated
Outputs and Type	1	1
Package / Case	-	TO-247-3
Power - Output	3 kW	3 kW
Power Dissipation (Max)	-	119 W
Rds On (Max) @ Id, Vgs	-	60 mOhm
Regulator Topology	Full-Bridge	Full-Bridge
Supplied Contents	Board(s)	Board(s)
Supplier Device Package	-	TO-247-3
Technology	-	GaNFET (Gallium Nitride)
Vgs (Max)	-	20 V
Vgs(th) (Max) @ Id	-	4.8 V
Voltage - Input	400 VDC	400 VDC

EVAL BOARD FOR TP65H050G4WS

Part	Regulator Topology	Frequency - Switching	Supplied Contents	Power - Output	Voltage - Input	Board Type	Main Purpose	Outputs and Type	Outputs and Type	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds	Power Dissipation (Max) [Max]	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package	Operating Temperature [Min]	Operating Temperature [Max]	Package / Case	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs [Max]	Vgs (Max)	FET Type	Technology	Drive Voltage (Max Rds On, Min Rds On)	Mounting Type
Transphorm TDINV3000W050B-KIT	Full-Bridge	50 kHz	Board(s)	3 kW	400 VDC	Fully Populated	DC/AC Inverter	Non-Isolated	1
Transphorm TP65H050G4WS										650 V	4.8 V	1000 pF	119 W	34 A	TO-247-3	-55 °C	150 °C	TO-247-3	60 mOhm	24 nC	20 V	N-Channel	GaNFET (Gallium Nitride)	10 V	Through Hole