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XP3P010AMT

XP3P010AMT

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YAGEO

MOSFET P CH -30V 18.5A PMPAK5X6

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XP3P010AMT

XP3P010AMT

Active
YAGEO

MOSFET P CH -30V 18.5A PMPAK5X6

Find alt

Description

General part information

XP3P010AMT

MOSFET P CH -30V 18.5A PMPAK5X6

Technical Specifications

Parameters and characteristics for this part

SpecificationXP3P010AMT
Current - Continuous Drain (Id) (Ta)18.5 A
Current - Continuous Drain (Id) (Tc)58 A
Drain to Source Voltage (Vdss)30 V
Drive Voltage (Max Rds On)4.5 V
Drive Voltage (Min Rds On)10 V
FET TypeP-Channel
Gate Charge (Max)54.4 nC
Input Capacitance (Ciss) (Max)6080 pF
Mounting TypeSurface Mount
Operating Temperature (Max)150 °C
Operating Temperature (Min)-55 °C
Package / Case8-PowerLDFN
Package Length5 mm
Package Name8-PMPAK
Package Width6 mm
Power Dissipation (Max)5 W, 50 W
Rds On (Max)10 mOhm
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max)3 V

Pricing

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CAD

3D models and CAD resources for this part

Documents

Technical documentation and resources