SISS30ADN-T1-GE3
ActiveVishay Dale
MOSFET N-CH 80V 15.9A/54.7A PPAK
SISS30ADN-T1-GE3
ActiveVishay Dale
MOSFET N-CH 80V 15.9A/54.7A PPAK
Description
General part information
SISS30ADN-T1-GE3
MOSFET N-CH 80V 15.9A/54.7A PPAK
Technical Specifications
Parameters and characteristics for this part
| Specification | SISS30ADN-T1-GE3 |
|---|---|
| Current - Continuous Drain (Id) (Ta) | 15.9 A |
| Drain to Source Voltage (Vdss) | 80 V |
| Drive Voltage (Max Rds On) | 7.5 V |
| Drive Voltage (Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Max) | 30 nC |
| Input Capacitance (Ciss) (Max) | 1295 pF |
| Mounting Type | Surface Mount |
| Operating Temperature (Max) | 150 °C |
| Operating Temperature (Min) | -55 °C |
| Package / Case | PowerPAK® 1212-8S |
| Package Name | PowerPAK® 1212-8S |
| Power Dissipation (Max) | 4.8 W, 57 W |
| Rds On (Max) | 8.9 mOhm |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) | 3.5 V |
Pricing
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