
MV2N5116
ActiveMicrochip Technology
JFET P-CH 30V TO18

MV2N5116
ActiveMicrochip Technology
JFET P-CH 30V TO18
Description
General part information
MV2N5116
JFET P-CH 30V TO18
Technical Specifications
Parameters and characteristics for this part
| Specification | MV2N5116 |
|---|---|
| Current - Drain (Idss) | 25 mA |
| Drain to Source Voltage (Vdss) | 30 V |
| FET Type | P-Channel |
| Grade | Military |
| Input Capacitance (Ciss) (Max) | 27 pF |
| Mounting Type | Through Hole |
| Operating Temperature (Max) | 200 °C |
| Operating Temperature (Min) | -65 °C |
| Package / Case | TO-18-3 Metal Can, TO-206AA |
| Package Name | TO-18 (TO-206AA) |
| Power - Max | 0.5 W |
| Qualification | MIL-PRF-19500 |
| Resistance - RDS(On) | 100 Ohm |
| Voltage - Breakdown (V(BR)GSS) | 30 V |
| Voltage - Cutoff (VGS off) | 6 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Sign in to see pricing
Create a free account to access distributor pricing data.
CAD
3D models and CAD resources for this part
Documents
Technical documentation and resources
No documents available