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NXPSCxx650X6Q

WNSC6D10650X6Q

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WeEn Semiconductors

WNSC6D10650X/TO220F-2L/STANDARD

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NXPSCxx650X6Q

WNSC6D10650X6Q

Active
WeEn Semiconductors

WNSC6D10650X/TO220F-2L/STANDARD

Find alt

Description

General part information

WNSC6D10650X6Q

Diode 650 V 10A Through Hole TO-220F

Technical Specifications

Parameters and characteristics for this part

SpecificationWNSC6D10650X6Q
Capacitance500 pF
Current - Average Rectified (Io)10 A
Current - Reverse Leakage50 µA
Mounting TypeThrough Hole
Operating Temperature - Junction (Max)175 °C
Operating Temperature - Junction (Min)-55 °C
Package / CaseTO-220-2 Full Pack, Isolated Tab
Package NameTO-220F
Reverse Recovery Time (trr)0 ns
SpeedNo Recovery Time
Speed - Fast Recovery (Minimum)500 mA
Speed - Recovery Current500 mA, 500 mA
TechnologySiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max)650 V
Voltage - Forward (Vf) (Max)1.45 V

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