
BZT52B3V9-G
ActiveTaiwan Semiconductor Corporation
SOD-123, 410MW, 2%, ZENER DIODE

BZT52B3V9-G
ActiveTaiwan Semiconductor Corporation
SOD-123, 410MW, 2%, ZENER DIODE
Description
General part information
BZT52B3V9-G
SOD-123, 410MW, 2%, ZENER DIODE
Technical Specifications
Parameters and characteristics for this part
| Specification | BZT52B3V9-G |
|---|---|
| Current - Reverse Leakage | 3 µA |
| Impedance (Max) (Zzt) | 90 Ohms |
| Mounting Type | Surface Mount |
| Operating Temperature (Max) | 150 °C |
| Operating Temperature (Min) | -55 °C |
| Package / Case | SOD-123 |
| Package Name | SOD-123 |
| Power - Max | 410 mW |
| Tolerance | 2 % |
| Voltage - Forward (Vf) (Max) | 900 mV |
| Voltage - Zener (Nom) (Vz) | 3.9 V |
Pricing
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CAD
3D models and CAD resources for this part
Documents
Technical documentation and resources
BZT52B3V9-G - Material Composition Declaration
BZT52B2V4-G SERIES - Datasheet
BZT52B2V4-G Series - FIT MTTF Report
AN-1006 Power Diode Parameters and Characteristic Introduction
Whisker - SOD-123 REV:A
SOD-123 - Packing Information
BZT52B2V4-G Series - Reliability Report
DECLARATION_LETTER_-_PRODUCT_SHELF_LIFE_REVB