NSV40301MZ4T1G
ActiveON Semiconductor
3.0 A, 40 V LOW V<SUB>CE(SAT)</SUB> NPN POWER BIPOLAR JUNCTION TRANSISTOR
NSV40301MZ4T1G
ActiveON Semiconductor
3.0 A, 40 V LOW V<SUB>CE(SAT)</SUB> NPN POWER BIPOLAR JUNCTION TRANSISTOR
Description
General part information
NSV40301MZ4T1G
The combination of low saturation voltage and high gain makes this 3.0 A, 40 V Low VCE(sat)NPN Power Bipolar Junction Transistor an ideal device for high speed switching applications where power saving is a concern.
Technical Specifications
Parameters and characteristics for this part
| Specification | NSV40301MZ4T1G |
|---|---|
| Current - Collector (Ic) (Max) | 3 A |
| Current - Collector Cutoff (Max) | 100 nA |
| DC Current Gain (hFE) (Min) | 200 |
| Frequency - Transition | 215 MHz |
| Mounting Type | Surface Mount |
| Operating Temperature (Max) | 150 °C |
| Operating Temperature (Min) | -55 °C |
| Package / Case | TO-261AA, TO-261-4 |
| Package Name | SOT-223 (TO-261) |
| Power - Max | 800 mW |
| Transistor Type | NPN |
| Vce Saturation (Max) | 200 mV |
| Voltage - Collector Emitter Breakdown (Max) | 40 V |
Pricing
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