DMG6898LSD-13

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Diodes Inc

POWER FIELD-EFFECT TRANSISTOR, 9.5A I(D), 20V, 0.016OHM, 2-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, GREEN, PLASTIC, SOP-8

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Active

Diodes Inc

POWER FIELD-EFFECT TRANSISTOR, 9.5A I(D), 20V, 0.016OHM, 2-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, GREEN, PLASTIC, SOP-8

Technical Specifications

Parameters and characteristics for this part

Specification	DMG6898LSD-13

Configuration	2 N-Channel (Dual)
Current - Continuous Drain (Id) @ 25°C	9.5 A
Drain to Source Voltage (Vdss)	20 V
FET Feature	Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs [Max]	26 nC
Input Capacitance (Ciss) (Max) @ Vds	1149 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-SOIC
Package / Case [x]	0.154 in
Package / Case [y]	3.9 mm
Power - Max [Max]	1.28 W
Rds On (Max) @ Id, Vgs [Max]	16 mOhm
Supplier Device Package	8-SO
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	1.5 V

N-Channel MOSFET

Part	Technology	Input Capacitance (Ciss) (Max) @ Vds	Operating Temperature [Min]	Operating Temperature [Max]	Rds On (Max) @ Id, Vgs [Max]	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)	Supplier Device Package	FET Feature	Package / Case	Package / Case [y]	Package / Case [x]	Configuration	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs [Max]	Power - Max [Max]	Mounting Type
Diodes Inc DMG6898LSD-13	MOSFET (Metal Oxide)	1149 pF	-55 °C	150 °C	16 mOhm	9.5 A	20 V	8-SO	Logic Level Gate	8-SOIC	3.9 mm	0.154 in	2 N-Channel (Dual)	1.5 V	26 nC	1.28 W	Surface Mount

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General part information

N-Channel MOSFET

Technical documentation and resources