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S70DR

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GeneSiC Semiconductor

DIODE GEN PURP REV 200V 70A DO5

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S70DR

Active
GeneSiC Semiconductor

DIODE GEN PURP REV 200V 70A DO5

Deep-Dive with AI

DocumentsDatasheet

Technical Specifications

Parameters and characteristics for this part

SpecificationS70DR
Current - Average Rectified (Io)70 A
Current - Reverse Leakage @ Vr10 µA
Mounting TypeChassis, Stud Mount
Operating Temperature - Junction [Max]180 °C
Operating Temperature - Junction [Min]-65 C
Package / CaseDO-203AB, DO-5, Stud
SpeedStandard Recovery >500ns
Speed200 mA
Supplier Device PackageDO-5
TechnologyStandard, Reverse Polarity
Voltage - DC Reverse (Vr) (Max) [Max]200 V
Voltage - Forward (Vf) (Max) @ If1.1 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyBulk 600$ 8.25

Description

General part information

S70DR

Diode 200 V 70A Chassis, Stud Mount DO-5

Documents

Technical documentation and resources